Deep ULTRAVIOLET LED can be widely used in sterilization, sterilization, printing and communication, etc. Recently, the Chinese Academy of Sciences institute of semiconductor lighting research and development center and the nano chemical research center of Peking University, Beijing institute of graphene liu team cooperation, developed a new epitaxial substrate graphene/sapphire, and put forward the modified graphene plasma pretreatment, promote the growth of AlN films to achieve deep uv LED's new strategy.
At the same time, Wei tongwave and Liu Zhongfan team worked together to propose a growth model of graphene/NPSS nanograph substrate epitaxial AlN, making deep ULTRAVIOLET light source a promising breakthrough in graphene industrialization.

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