Quantum dot light-emitting diodes (Qleds) are considered the ideal choice for the next generation of high-quality displays and solid-state lighting. In the past research, light-emitting diodes based on monochromatic quantum dots (QDs) have been developed rapidly. White Qleds (which emit red, green and blue at the same time) are also getting a lot of attention for their potential for lighting and backlighting applications. So far, there are still some problems in the performance of white QLED. The reported high performance white QLED is achieved by stacking devices, which will inevitably lead to a significant increase in the driving voltage. At the same time, the stability of the white light spectrum of the existing equipment under different brightness is poor, and the stability of the white light spectrum under different brightness is also very important for its practical application.

At the same time, due to low light extraction efficiency, THE EQE of QLED is severely limited. Only about 20% of the photons produced inside a typical QLED can be released into the air. Therefore, if we want to improve the performance of the device, it is necessary to conduct in-depth research on the light extraction of QLED. Existing optical extraction technologies often require complex manufacturing processes and costly microstructures to suppress waveguide light in Qleds. On the contrary, simple modification of the substrate surface on the outside of the device is obviously an effective and feasible strategy.

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